Abstract:

In order to explore the effects of silicon fertilizer on lodging resistance,growth and development,yield,and quality of winter wheat,Kenmai 58 was used as the experimental material.The treatments included 15 kg/ha (Si1) and 30 kg/ha(Si2)silicon fertilizer applied as basal fertilizer,15 kg/ha (Si3) and 30 kg/ha(Si4) silicon fertilizer applied as topdressing at jointing stage,and no silicon fertilizer (CK).The stem lodging resistance at grain filling stage,plant growth,yield,and quality were measured.The results showed that Si4 significantly reduced the plant height,height of gravity center,and the length of the basal second internode.Compared with CK,Si3 increased the thickness of the basal second and third internodes by over 14.7%.Si2 and Si4 increased the plumpness and breaking resistance of the basal second or third internodes by 8.6%—18.7% and by 12.4%—49.2%,respectively.Nevertheless,silicon fertilizer had no effect on the diameter and dry weight of the basal internode.Moreover,silicon fertilizer increased the chlorophyll content (SPAD) of leaves at jointing stage,but had no effect on tillering,productive tiller percentage,dry matter accumulation,harvest index,yield,and main quality indexes.In summary,the application of silicon fertilizer improved the stem lodging resistance by lowering plant height,gravity center height,and basal internode length,while increasing the basal internode thickness,plumpness,and breaking resistance.Silicon fertilizer also increased chlorophyll content (SPAD) without adversely affecting wheat growth,grain yield,or quality.Silicon fertilizer could be applied either as basal fertilizer or topdressing at jointing stage.

Key words: Wheat, Silicon fertilizer, Lodging resistance, Yield, Quality

CLC Number: 

• S512.1小麦