Effects of Silicon Fertilizer on Lodging Resistance and Grain Yield in Naked Oats

doi:10.7668/hbnxb.20196688

Abstract

Abstract:

To investigate the effects of silicon fertilizer on lodging resistance and grain yield of naked oats,a randomized block design was adopted.Using the lodging-resistant variety Baiyan 2 and the lodging-susceptible variety Zhangyou 9 as materials,a field experiment was conducted in Ulanqab City,Inner Mongolia Autonomous Region,from 2024 to 2025.Five silicon fertilizer treatments were applied:0(CK),30(Si30),60(Si60),90(Si90),and 120 kg/ha(Si120).Measurements and analyses were performed to evaluate the effects of different silicon fertilizer treatments on lodging rate,grain yield,stem strength,and stem material composition of naked oats.The results showed that silicon fertilizer had a highly significant effect on the lodging rate of naked oats,compared with CK,the lodging rates of Baiyan 2 and Zhangyou 9 under the Si60 treatment were reduced by an average of 37.53 and 33.20 percentage points.Over the two-year period,the grain yield of Baiyan 2 peaked under the Si90 treatment,showing an average increase of 19.06% compared to CK;the grain yield of Zhangyou 9 peaked under the Si60 treatment,showing an average increase of 28.09% compared to CK.Silicon fertilizer improved the morphology of the second basal internode.Compared with CK,it significantly reduced the second internode length of naked oats by 19.82%;increased the second internode diameter of naked oats by 18.17%;and increased the second internode wall thickness of naked oats by 41.77%.Silicon fertilizer significantly enhanced the mechanical strength of naked oat stems,compared with CK,the stem breaking resistance,stem puncture strength,and stem crushing strength of naked oats increased significantly by 27.78%,24.39%,and 16.33%.Silicon fertilizer exerted a highly significant effect on the cellulose and silicon content in the second basal internode of naked oats.Compared with CK,it increased the cellulose content and silicon content in the second basal internode by 3.63% and 11.32%.The above results indicate that for lodging-resistant naked oat varieties,applying silicon fertilizer at 90 kg/ha ensures the highest grain yield while maintaining lodging resistance,and for lodging-sensitive varieties,applying silicon fertilizer at 60 kg/ha achieves the highest levels of both lodging resistance and grain yield.

Key words: Naked oats, Silicon fertilizer, Lodging resistance, Grain yield, Lodging rate

CLC Number:

LIU Kexin, YANG Lin, ZHAO Baoping, WANG Fengwu, ZHENG Chengzhong, WANG Qianjun, MEI Xue. Effects of Silicon Fertilizer on Lodging Resistance and Grain Yield in Naked Oats[J]. Acta Agriculturae Boreali-Sinica, 2026, 41(5): 188-198. doi: 10.7668/hbnxb.20196688.

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References 30

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年份 Year	有机质/ (g/kg) Organic matter	全氮/(g/kg) Total nitrogen	碱解氮/(mg/kg) Hydrolyzable nitrogen	有效磷/(mg/kg) Available phosphorus	速效钾/(mg/kg) Available potassium	有效硅/(mg/kg) Available silicon	pH值 pH value
2024	24.48	1.92	74.32	27.83	159.85	86.95	8.37
2025	28.62	2.00	99.69	44.89	211.38	71.55	7.61

年份 Year	有机质/ (g/kg) Organic matter	全氮/(g/kg) Total nitrogen	碱解氮/(mg/kg) Hydrolyzable nitrogen	有效磷/(mg/kg) Available phosphorus	速效钾/(mg/kg) Available potassium	有效硅/(mg/kg) Available silicon	pH值 pH value
2024	24.48	1.92	74.32	27.83	159.85	86.95	8.37
2025	28.62	2.00	99.69	44.89	211.38	71.55	7.61

变异来源 Source of variation	籽粒产量/(t/hm²) Grain yield	倒伏率/% Lodging rate
Y	^**	^**
V	^**	^*
Si	^**	^**
Y×V	ns	ns
Y×Si	^**	^**
V×Si	ns	^*
Y×V×Si	ns	^**

变异来源 Source of variation	籽粒产量/(t/hm²) Grain yield	倒伏率/% Lodging rate
Y	^**	^**
V	^**	^*
Si	^**	^**
Y×V	ns	ns
Y×Si	^**	^**
V×Si	ns	^*
Y×V×Si	ns	^**

年份 Year	品种 Variety	硅肥处理 Silicon fertilizer treatment	单位面积穗数/(穗/m²) Panicle number per unit area	小穗数 Spikelets panicle	穗粒数 Grains per panicle	千粒质量/g 1000-grain weight
2024	白燕2号	CK	296.00±50.91b	25.50±2.76c	53.67±3.97c	20.06±0.68c
		Si30	287.00±59.00b	26.50±4.36c	63.17±12.87bc	20.48±0.93bc
		Si60	304.00±21.91b	32.33±2.48ab	71.25±7.87ab	21.84±1.30ab
		Si90	363.00±67.99ab	35.83±4.98a	80.08±12.97a	22.28±0.72a
		Si120	388.00±14.24a	28.67±2.26bc	60.75±5.40bc	19.95±1.28c
	张莜9号	CK	271.00±52.60b	32.75±5.29ab	62.33±10.94ab	19.72±2.12ab
		Si30	249.00±14.00b	27.25±3.37b	51.67±3.54b	19.93±0.61ab
		Si60	299.00±18.29b	35.83±4.12a	73.92±17.44ab	21.26±0.82a
		Si90	278.00±30.20b	39.50±2.08a	77.92±22.13a	21.14±1.43a
		Si120	357.00±48.70a	34.83±5.28a	68.17±17.73ab	18.27±1.57b
2025	白燕2号	CK	277.33±12.22c	32.75±4.83bc	52.38±6.16b	21.75±1.08b
		Si30	276.00±10.58c	32.38±4.93c	50.00±8.42b	22.76±1.74ab
		Si60	345.33±18.90b	43.88±4.42a	66.63±8.19a	23.20±1.23ab
		Si90	344.00±18.33b	43.50±2.78a	63.25±5.99a	23.98±1.50a
		Si120	385.33±4.62a	37.13±4.55b	54.13±10.70b	22.12±1.41b
	张莜9号	CK	313.33±26.03b	35.50±5.48c	70.13±6.92bc	24.94±1.82c
		Si30	292.00±28.00b	40.75±5.57bc	68.25±9.18c	24.86±1.07c
		Si60	374.67±18.04a	44.50±5.40ab	76.38±5.18ab	26.89±0.84ab
		Si90	381.33±18.04a	47.88±4.12a	77.25±4.20a	27.94±1.95a
		Si120	390.67±22.03a	39.00±5.55bc	69.13±6.24c	26.11±1.25bc

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