华北农学报 ›› 2002, Vol. 17 ›› Issue (2): 92-96. doi: 10.3321/j.issn:1000-7091.2002.02.020

• 论文 • 上一篇    下一篇

培养液浓度对NFT栽培生菜生长发育的影响

范双喜1, 伊东正2   

  1. 1. 北京农学院, 园艺系, 北京 102206;
    2. 千叶大学, 园艺学部, 日本 松户市 271-648
  • 收稿日期:2001-09-06 出版日期:2002-06-28
  • 作者简介:范双喜(1964-),男,副教授,博士研究生,主要从事蔬菜栽培生理的教学与研究工作.
  • 基金资助:
    国家教育部留学基金委资助项目(97811034)

Effects of Solution Concentration on Growth and Development of Lettuce in Nutrient Film Technique Culture

FAN Shuangxi1, Ito Tadashi2   

  1. 1. Depar tment of Hort iculture, Beijing Ag ricultural Colleg e, Beijing 102206, China;
    21 Faculty o f Horticulture, Chiba University, Mastoid 271-648, Japan
  • Received:2001-09-06 Published:2002-06-28

摘要: 选用NFT主栽生菜品种为材料,采用通用营养液配方,研究了不同培养液浓度对生菜生长发育的影响.结果表明,浓度为/4倍时生育最好,产量最高,其余的依次为1倍>3/4倍>3/2倍>1/2倍>1/4倍.但从生产实用性综合选择,以3/4倍浓度最适.形成产量差异的原因是:适宜浓度下,生菜分化叶片快,叶绿素含量高,叶形比低,叶片生长快;发根早,根系多,根重大.叶片和根系中N,P,K,Ca,Mg含量与培养液浓度并不成线性关系.

关键词: 生菜, NFT栽培, 营养液, 浓度, 生育

Abstract: A mainly used variety and a commonly used formula w ere adopted to study the effect s of solut ion concentration on growth and development of lettuce. Fastest leaf differentiat ion and g row th, highest chlorophyll content, lowest leaf shape rat io, earliest rooting and most f lourishing roots were observed. T he result s indicated that plants under the 5/ 4 St t reatment g rew best and bore highest yield. The rest are 1St , 3/ 4St , 3/ 2St , 1/ 2St and 1/ 4St , successively. However, the opt imal select ion for practical use is 3/ 4St , w hich cost less than 5/ 4St . T he content s of N, P, K, Ca and Mg both in the leaf and in the root are not linear to the solution concent rat ion.

Key words: Lettuce, Nutrient film technique, Solut ion, Concent rat ion, Growth and development

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引用本文

范双喜, 伊东正. 培养液浓度对NFT栽培生菜生长发育的影响[J]. 华北农学报, 2002, 17(2): 92-96. doi: 10.3321/j.issn:1000-7091.2002.02.020.

FAN Shuangxi, Ito Tadashi. Effects of Solution Concentration on Growth and Development of Lettuce in Nutrient Film Technique Culture[J]. ACTA AGRICULTURAE BOREALI-SINICA, 2002, 17(2): 92-96. doi: 10.3321/j.issn:1000-7091.2002.02.020.

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