华北农学报 ›› 2025, Vol. 40 ›› Issue (6): 160-167. doi: 10.7668/hbnxb.20195687

所属专题: 小麦 土壤肥料

• 资源环境·植物保护 • 上一篇    下一篇

硅肥对小麦茎秆抗倒伏特性、产量和品质的影响

付鹏浩, 陈泠, 刘易科, 朱展望, 佟汉文, 张宇庆, 邹娟   

  1. 湖北省农业科学院 粮食作物研究所,粮食作物种质创新与遗传改良湖北省重点实验室,农业农村部作物分子育种重点实验室,湖北 武汉 430064
  • 收稿日期:2024-12-19 出版日期:2025-12-31
  • 通讯作者:
    邹 娟(1981—),女,湖北汉川人,副研究员,博士,主要从事小麦营养与施肥研究。
  • 作者简介:

    付鹏浩(1988—),男,湖北老河口人,助理研究员,博士,主要从事小麦绿色、高产、高效、抗逆栽培研究。

  • 基金资助:
    湖北省农业科学院青年科学基金项目(2023NKYJJ05); 国家小麦产业技术体系武汉综合试验站项目(CARS-03); 湖北省重大科技专项(2022ABA001); 湖北省农业科技创新中心资助项目

Effects of Silicon Fertilizers on Stem Lodging Resistance,Yield and Quality of Wheat

FU Penghao, CHEN Ling, LIU Yike, ZHU Zhanwang, TONG Hanwen, ZHANG Yuqing, ZOU Juan   

  1. Institute of Food Crops,Hubei Academy of Agricultural Sciences,Hubei Key Laboratory of Food Crop Germplasm and Genetic Improvement,Key Laboratory of Crop Molecular Breeding, Ministry of Agriculture and Rural Affairs,Wuhan 430064,China
  • Received:2024-12-19 Published:2025-12-31

摘要:

为探究外源硅肥对小麦抗倒性、生长、产量及品质的影响,以垦麦58为试验材料,设置4个硅肥处理:基施硅肥15 kg/hm2(Si1)和30 kg/hm2(Si2)、拔节期追施硅肥15 kg/hm2(Si3)和30 kg/hm2(Si4),以不施硅肥为对照。测定了灌浆期小麦茎秆抗倒伏能力、植株生长、产量及品质相关指标。结果表明,Si4处理显著降低小麦株高、重心高度和基部第2节间长度;Si3处理基部第2,3节间厚度增加14.7%以上;Si2和Si4处理的基部第2,3节间充实度增加8.6%~18.7%,抗折力提高12.4%~49.2%,但对节间粗度和干质量影响较小。外源硅肥提高了拔节期叶绿素含量(SPAD),对分蘖、成穗、地上部干物质积累、收获指数、产量及主要品质指标无显著影响。综上,外源硅肥通过降低株高、重心高度和基部节间长度,增加基部节间厚度、充实度和抗折力,改善了茎秆质量,增强了茎秆抗倒性,同时提高了叶绿素含量,对小麦生长、产量和品质无不利影响。硅肥基施或拔节期追施均可。

关键词: 小麦, 硅肥, 抗倒伏, 产量, 品质

Abstract:

In order to explore the effects of silicon fertilizer on lodging resistance,growth and development,yield,and quality of winter wheat,Kenmai 58 was used as the experimental material.The treatments included 15 kg/ha (Si1) and 30 kg/ha(Si2)silicon fertilizer applied as basal fertilizer,15 kg/ha (Si3) and 30 kg/ha(Si4) silicon fertilizer applied as topdressing at jointing stage,and no silicon fertilizer (CK).The stem lodging resistance at grain filling stage,plant growth,yield,and quality were measured.The results showed that Si4 significantly reduced the plant height,height of gravity center,and the length of the basal second internode.Compared with CK,Si3 increased the thickness of the basal second and third internodes by over 14.7%.Si2 and Si4 increased the plumpness and breaking resistance of the basal second or third internodes by 8.6%—18.7% and by 12.4%—49.2%,respectively.Nevertheless,silicon fertilizer had no effect on the diameter and dry weight of the basal internode.Moreover,silicon fertilizer increased the chlorophyll content (SPAD) of leaves at jointing stage,but had no effect on tillering,productive tiller percentage,dry matter accumulation,harvest index,yield,and main quality indexes.In summary,the application of silicon fertilizer improved the stem lodging resistance by lowering plant height,gravity center height,and basal internode length,while increasing the basal internode thickness,plumpness,and breaking resistance.Silicon fertilizer also increased chlorophyll content (SPAD) without adversely affecting wheat growth,grain yield,or quality.Silicon fertilizer could be applied either as basal fertilizer or topdressing at jointing stage.

Key words: Wheat, Silicon fertilizer, Lodging resistance, Yield, Quality

中图分类号: 

引用本文

付鹏浩, 陈泠, 刘易科, 朱展望, 佟汉文, 张宇庆, 邹娟. 硅肥对小麦茎秆抗倒伏特性、产量和品质的影响[J]. 华北农学报, 2025, 40(6): 160-167. doi: 10.7668/hbnxb.20195687.

FU Penghao, CHEN Ling, LIU Yike, ZHU Zhanwang, TONG Hanwen, ZHANG Yuqing, ZOU Juan. Effects of Silicon Fertilizers on Stem Lodging Resistance,Yield and Quality of Wheat[J]. Acta Agriculturae Boreali-Sinica, 2025, 40(6): 160-167. doi: 10.7668/hbnxb.20195687.